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Materials Performance

Item
Specification
Inspection Method
Growth Mode
NS
--
Crystallinity
Monocrystalline
Preferential etch
Conductive Type
P-Type
P/N tester
Size
M6: 166mm * 223mm M10: 182mm * 247mm
Wafer inspection system
Thickness
165 ﹢20/﹣10 µm 160 ﹢20/﹣10 µm 155 ﹢20/﹣10 µm 150 ﹢10/﹣10 µm
Wafer inspection system
Item:
Growth Mode
Specification:
NS
Inspection Method:
--
Item:
Crystallinity
Specification:
Monocrystalline
Inspection Method:
Preferential etch
Item:
Conductive Type
Specification:
P-Type
Inspection Method:
P/N tester
Item:
Size
Specification:
M6: 166mm * 223mm M10: 182mm * 247mm
Inspection Method:
Wafer inspection system
Item:
Thickness
Specification:
165 ﹢20/﹣10 µm 160 ﹢20/﹣10 µm 155 ﹢20/﹣10 µm 150 ﹢10/﹣10 µm
Inspection Method:
Wafer inspection system

Electrical Property

Item
Specification
Inspection Method
Electrical resistivity
0.4-1.1 ohm.cm
Wafer inspection system
Minority carrier lifetime
≥50us
Sinton BCT-400 QSSPC Transient photoconductive decay (with injection level: 1E15 cm-3)
Oxygen content
≤8E + 17 at/cm³
FTIR spectrometer
Carbon content
≤ 5E + 16 at/cm³
FTIR spectrometer
Item:
Electrical resistivity
Specification:
0.4-1.1 ohm.cm
Inspection Method:
Wafer inspection system
Item:
Minority carrier lifetime
Specification:
≥50us
Inspection Method:
Sinton BCT-400 QSSPC Transient photoconductive decay (with injection level: 1E15 cm-3)
Item:
Oxygen content
Specification:
≤8E + 17 at/cm³
Inspection Method:
FTIR spectrometer
Item:
Carbon content
Specification:
≤ 5E + 16 at/cm³
Inspection Method:
FTIR spectrometer

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